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GenX3TM 600V IGBT
Medium speed low Vsat PT IGBTs 5-40 kHz switching
IXGB200N60B3
VCES = IC110 = VCE(sat) tfi(typ) =
600V 200A 1.5V 183ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C (chip capability) TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 1 Clamped inductive load @ VCE 600V TC = 25C
Maximum Ratings 600 600 20 30 75 200 600 ICM = 300 1250 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C C N/lb. g
PLUS264TM (IXGB)
G C E
(TAB)
G = Gate E = Emitter Features
C
= Collector
TAB = Collector
Maximum lead temperature for soldering Plastic body for 10s Mounting force
300 260 30..120/6.7..27 10
NPT IGBT technology Low switching losses Low tail current No latch up Short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard package Advantages Space savings High power density power supplies Low gate charge results in simple drive requirement
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1 IC = 200A TJ = 125C TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 25 5.0 100 1.35 1.65 1.75 1.50 V V A mA nA V V V
Applications High Frequency Inverters UPS and Welding AC and DC Motor Controls Power Supplies and Drivers for Solenoids, Relays and Connectors PFC Circuits Battery Chargers
(c) 2008 IXYS CORPORATION, All rights reserved
DS99929A(05/08)
IXGB200N60B3
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 125C IC = 100A, VGE = 15V VCE = 300V, RG = 1 Inductive load, TJ = 25C IC = 100A, VGE = 15V VCE = 300V, RG = 1 IC = 100A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 95 160 26 1260 97 750 115 245 44 83 1.6 310 183 2.9 42 80 2.4 430 300 4.2 0.13 450 300 4.5 S nF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.10 C/W C/W
Note: Bottom heatsink meets 2500Vrms Isolation to the other
ISOPLUS264TM (IXGB) Outline
Ref: IXYS CO 0128
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGB200N60B3
Fig. 1. Output Characteristics @ 25C
200 180 160 140 VGE = 15V 11V 9V 350 300 250 VGE = 15V 11V 9V 7V
Fig. 2. Extended Output Characteristics @ 25C
120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 5V 6V
IC - Amperes
IC - Amperes
7V
200 150 6V 100 50 5V 0 0 1 2 3 4 5 6 7 8 9
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
200 180 160 140 VGE = 15V 13V 11V 1.25 1.20 9V 1.15 1.10 1.05 1.00 0.95 0.90 5V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.85 0.80 -50 -25
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 200A
120 100 80 60 40 20 0 7V
VCE(sat) - Normalized
IC - Amperes
I
C
= 150A
I
C
= 100A
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.4 3.2 3.0 2.8 120 TJ = 25C 160 140
Fig. 6. Input Admittance
IC - Amperes
2.6
100 80 60 40 20 0
VCE - Volts
2.4 2.2 2.0 1.8 1.6 1.4 1.2 5 6 7
I
C
= 200A 150A 100A
TJ = 125C 25C - 40C
8
9
10
11
12
13
14
15
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGB200N60B3
Fig. 7. Transconductance
250 225 200 TJ = - 40C 14 25C 125C 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 700 800 16 VCE = 300V I C = 100A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
175
125 100 75 50 25 0
IC - Amperes
VGE - Volts
150
QG - NanoCoulombs
Fig. 9. Capacitance
100,000 350 300
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
10,000
Cies 250
IC - Amperes
200 150 100 TJ = 125C
1,000 Coes
100
f = 1 MHz
10 0 5 10 15 20 25
Cres
50 0 100
RG = 1 dV / dt < 10V / ns
30
35
40
200
300
400
500
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - C / W
0.100
0.010
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGB200N60B3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
4.5 3.5 5.0 4.5 4.0 I
C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
3.0 Eoff VCE = 300V TJ = 125C Eon
----
= 100A
3.0
4.0
RG = 1 , VGE = 15V
2.7 2.4 2.1 1.8 1.5 1.2 TJ = 25C 0.9 0.6 0.3 0.0 100
Eoff - MilliJoules
Eoff - MilliJoules
3.5 Eoff VCE = 300V 2.5 I C = 50A Eon -
2.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5
E
E - MilliJoules
on
on
- MilliJoules
3.0
---
TJ = 125C , VGE = 15V
2.0
1.5
2.0
1.0
1.5 1 2 3 4 5 6 7 8 9 10
0.5
0.0 50 55 60 65 70 75 80 85 90 95
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
4.5 4.0 3.5 Eoff VCE = 300V I C = 100A Eon 2.7 330 320 310 2.1 1.8 1.5 1.2 0.9 I C = 50A 0.6 0.3 125
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1300
----
RG = 1 , VGE = 15V
2.4
td(off) - - - TJ = 125C, VGE = 15V VCE = 300V
tf
1200 1100
t d(off) - Nanoseconds
3.0 2.5 2.0 1.5 1.0 0.5 25 35 45 55 65 75 85 95
t f - Nanoseconds
Eoff - MilliJoules
300 290 280 270 260 250 240 230 1 2 3 4 5 6 7 8 9 10 I = 50A I = 100A
1000 900 800 700 600 500 400 300
E - MilliJoules
on
C
C
105
115
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
320 300 280 TJ = 125C 500 480 460 340 320 300 280
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
500
tf
td(off) - - - -
480 460 440 420 400
RG = 1, VGE = 15V VCE = 300V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
260 240 220 200 180 160 140 120 50 55 60 65 70 75 80 85 90 95 TJ = 25C
440
tf
VCE = 300V
td(off) - - - -
420 400 380 360 340 320 300 100
260 240 220 200 180 160 140 120 25 35 45 55 65 75 85 95 105 115 I C = 50A, 100A
RG = 1 , VGE = 15V
380 360 340 320 300 280 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGB200N60B3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
150 140 90
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
48
tr
130 VCE = 300V
td(on) - - - 120 80
tr
VCE = 300V
td(on) - - - 46
TJ = 125C, VGE = 15V
RG = 1 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
110 I 90 I 70
C C
100 = 100A 80 = 50A 60
70
44
60
TJ = 25C, 125C
42
50
40
50
40
40
38
30 1 2 3 4 5 6 7 8 9 10
20
30 50 55 60 65 70 75 80 85 90 95
36 100
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
90 48
80 I C = 100A
46
t d(on) - Nanoseconds
t r - Nanoseconds
70
tr
VCE = 300V
td(on) - - - -
44
60
RG = 1 , VGE = 15V
42
50 I 40
C
40 = 50A 38
30 25 35 45 55 65 75 85 95 105 115
36 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_200N60B3(97)3-28-08-A

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